The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
May. 27, 1999
Applicant:
Inventors:
Taylor R. Efland, Richardson, TX (US);
Sameer Pendharkar, Plano, TX (US);
Dan M. Mosher, Plano, TX (US);
Peter Chia-cu Mei, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/978 ;
U.S. Cl.
CPC ...
H01L 2/978 ;
Abstract
A RESURF LDMOS transistor (,) has a drain region including a first region (,) and a deep drain buffer region (,) surrounding the first region. The first region is more heavily doped than the deep drain buffer region. The deep drain buffer region improves the robustness of the transistor.