IDiyas

For the Inventor, By the Inventor

Taipei, Taiwan

Chun-Hung Lin

USPTO Granted Patents = 94 

 

Average Co-Inventor Count = 3.2

ph-index = 10

Forward Citations = 525(Granted Patents)

Forward Citations (Not Self Cited) = 518(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • San Diego, CA (US) (1999 - 2002)
  • Tainan Hsien, TW (2004)
  • I-Lan, TW (2003 - 2005)
  • Fongshan, TW (2005)
  • Taoyuan County, TW (2009)
  • Feng Shan, TW (2009)
  • Jhubei, TW (2010)
  • Hsinchu Hsien, TW (2004 - 2011)
  • Hsin Chu, TW (1998 - 2018)
  • Kaohsiung, TW (2001 - 2019)
  • Taoyuan, TW (2007 - 2020)
  • Taipei, TW (2004 - 2023)
  • Hsinchu County, TW (2020 - 2024)

Company Filing History:

goldMedal41 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal10 out of 9,138 
 
Industrial Technology Research Institute
 patents
bronzeMedal10 out of 416 
 
Ememory Technology Inc.
 patents
4. 6 out of 1,867 
 
Advanced Semiconductor Engineering, Inc.
 patents
5. 5 out of 685 
 
Academia Sinica
 patents
6. 4 out of 7 
 
Big Sun Energy Technology Inc.
 patents
7. 3 out of 360 
 
Sunplus Technology Co., Ltd.
 patents
8. 2 out of 1,186 
 
The Scripps Research Institute
 patents
9. 2 out of 980 
 
Compal Electronics, Inc.
 patents
10. 1 out of 3,595 
 
Macronix International Co., Ltd.
 patents
11. 1 out of 2 
 
Taiwan Intelligent Robotics Company Ltd.
 patents
12. 1 out of 58 
 
Solid State System Co., Ltd.
 patents
13. 1 out of 14 
 
Compal Communications, Inc.
 patents
14. 1 out of 647 
 
Inventec (pudong) Technology Corporation
 patents
15. 1 out of 1,585 
 
Inventec Corp.
 patents
16. 1 out of 14 
 
Sentec E&e Co., Ltd.
 patents
17. 1 out of 1 
 
Compel Communications, Inc.
 patent
18. 1 out of 30 
 
China Textile Institute
 patents
19. 3 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1998-2025

Loading Chart...
Loading Chart...
94 patents (USPTO):
1. 12477724 - Antifuse-type one time programming memory cell with gate-all-around transistor (2025-11-18),
2. 12394479 - PMOS voltage selection circuit with an auxiliary selection circuit to prevent a floating output (2025-08-19),
3. 12387804 - Anti-fuse memory device (2025-08-12),
4. 12334474 - Forming recesses in molding compound of wafer to reduce stress (2025-06-17),
5. 11972800 - Non-volatile memory cell and non-volatile memory cell array (2024-04-30),
6. 11783905 - Anti-fuse memory device, memory array, and programming method of an anti-fuse memory device for preventing leakage current and program disturbance (2023-10-10),
7. 11658153 - Forming recesses in molding compound of wafer to reduce stress (2023-05-23),
8. 11311138 - Automatic device for brewing beverages (2022-04-26),
9. 11282817 - Semiconductor device package including embedded conductive elements (2022-03-22),
10. 11263106 - Trace configuration calculating method and portable electronic apparatus thereof (2022-03-01),
11. 11139006 - Self-biased sense amplification circuit (2021-10-05),
12. 11086349 - Reference voltage generator capable of reducing hot carrier stress (2021-08-10),
13. 11074963 - Non-volatile memory and memory sector thereof (2021-07-27),
14. 10714201 - Memory system capable of pre-screening internal transistors (2020-07-14),
15. 10700080 - Random bit cell with memory units (2020-06-30),

As a client, you would like an article on inventor Chun-Hung Lin, whose passion for innovation and dedication to creating has established him as a pioneer in the world of inventions. Let's structure the article with a title, introduction, sections on his latest patents, career highlights, collaborations, and a conclusion.

Title: Chun-Hung Lin: A Trailblazer in Invention

Introduction:

Chun-Hung Lin, based in Taipei, TW, is an inventor whose unwavering commitment to innovation has left an indelible mark on the industry. With an impressive portfolio of 90 patents, Lin's creative vision continues to inspire aspiring inventors worldwide.

Latest Patents:

1. Non-volatile memory cell and non-volatile memory cell array - Lin's groundbreaking work includes the development of a non-volatile memory cell featuring innovative components such as floating gate transistors and select transistors for enhanced performance.

2. Anti-fuse memory device, memory array, and programming method - Lin's inventive approach to preventing leakage current and program disturbance in anti-fuse memory devices showcases his technical prowess and forward-thinking mindset.

Career Highlights:

Lin's professional journey has seen him making significant contributions at esteemed organizations such as Taiwan Semiconductor Manufacturing Company Limited (TSMC) and the Industrial Technology Research Institute. His expertise and innovative spirit have propelled these companies to new heights in the world of technology.

Collaborations:

Throughout his career, Lin has collaborated closely with talented individuals like Yu-Feng Chen and Han-Ping Pu. These partnerships have fostered a culture of innovation and knowledge-sharing, leading to remarkable advancements in the field of invention.

Conclusion:

Chun-Hung Lin's relentless pursuit of innovation and his remarkable patent portfolio serve as a testament to his creativity and technical acumen. His legacy as a trailblazer in the world of invention will continue to inspire generations of inventors to push boundaries, think creatively, and shape the future of technology.

Please let me know if you would like any further details or modifications to the article on inventor Chun-Hung Lin.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…