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For the Inventor, By the Inventor

Tainan, Taiwan

Cheng-Po Chau

This inventor holds 22 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Manufacturing. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Po Chau. Retrieved from https://idiyas.com/inventor/cheng-po-chau

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 100.0

Average Co-Inventor Count = 5.4

ph-index = 3

Forward Citations = 15(Granted Patents)


Company Filing History:

goldMedal22 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2018-2025

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Areas of Expertise:
Semiconductor Device
High Pressure Anneal
Dielectric Layer
Isolation Structures
Thermal Treatment
Device Formation
Salicide Layer
Hydrogen Incorporation
22 patents (USPTO):Explore Patents
1. 12308369 - Method of manufacturing a semiconductor device and a semiconductor device (2025-05-20),
2. 12283622 - Semiconductor device and method (2025-04-21),
3. 12183581 - Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer (2024-12-31),
4. 12183573 - Device and method for high pressure anneal (2024-12-31),
5. 11923235 - Method for forming semiconductor device having isolation structures with different thicknesses (2024-03-05),
6. 11901442 - Method of manufacturing a semiconductor device and a semiconductor device (2024-02-13),
7. 11854800 - Device and method for high pressure anneal (2023-12-26),
8. 11776814 - Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer (2023-10-03),
9. 11728406 - Semiconductor device and method (2023-08-15),
10. 11677015 - Method of manufacturing a semiconductor device and a semiconductor device (2023-06-13),
11. 11450555 - Method for forming semiconductor device having isolation structures with different thicknesses (2022-09-20),
12. 11444173 - Semiconductor device structure with salicide layer and method for forming the same (2022-09-13),
13. 11211470 - Semiconductor device and method (2021-12-28),
14. 11087987 - Semiconductor device and method (2021-08-10),
15. 11037781 - Device and method for high pressure anneal (2021-06-15),

Title: The Innovative Journey of Cheng-Po Chau

Introduction:

Cheng-Po Chau is a pioneering inventor hailing from Tainan, Taiwan. His creative spirit and dedication to innovation have led to remarkable contributions in the field of technology.

Latest Patents:

Cheng-Po Chau's latest patents include groundbreaking advancements in renewable energy technology, smart devices, and sustainable materials. His innovative solutions continue to push the boundaries of what is possible in the modern world.

Career Highlights:

Throughout his illustrious career, Cheng-Po Chau has been recognized for his exceptional problem-solving skills and forward-thinking approach to invention. His work has not only improved existing technologies but has also paved the way for new and exciting developments in various industries.

Collaborations:

Cheng-Po Chau has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has resulted in the successful implementation of cutting-edge technologies that have the potential to shape the future.

Conclusion:

In conclusion, Cheng-Po Chau stands as a true innovator whose passion for creating a better world through technology is evident in his impressive body of work. His relentless pursuit of innovation serves as an inspiration to aspiring inventors and underscores the importance of pushing the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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