The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
May. 25, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Szu-Ying Chen, Hsinchu, TW;
Ya-Wen Chiu, Tainan, TW;
Cheng-Po Chau, Tainan, TW;
Yi Che Chan, Hsinchu, TW;
Chih Ping Liao, Hsinchu, TW;
YungHao Wang, Hsinchu, TW;
Sen-Hong Syue, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.