The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Jul. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Ta Wu, Chiayi County, TW;

Chii-Ming Wu, Taipei, TW;

Sen-Hong Syue, Hsinchu County, TW;

Cheng-Po Chau, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 27/105 (2023.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/785 (2013.01); H01L 27/105 (2013.01); H01L 27/1463 (2013.01);
Abstract

A method includes forming a first trench and a second trench in a semiconductor substrate; forming a first mask over the semiconductor substrate, wherein the first mask is disposed in a first portion of the first trench and exposes the second trench and a second portion of the first trench; after forming the first mask, deepening the second trench and the second portion of the first trench; after deepening the second trench and the second portion of the first trench, removing the first mask; and after removing the first mask, filling a dielectric material in both the first and second trenches.


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