The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Oct. 30, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Jin-Mu Yin, Kaohsiung, TW;
Tsung-Chieh Hsiao, Shetou Township, Changhua County, TW;
Chia-Lin Chuang, Taoyuan, TW;
Li-Zhen Yu, New Taipei, TW;
Dian-Hau Chen, Hsinchu, TW;
Shih-Wei Wang, Hsinchu, TW;
De-Wei Yu, Pingtung, TW;
Chien-Hao Chen, Chuangwei Township, Ilan County, TW;
Bo-Cyuan Lu, New Taipei, TW;
Jr-Hung Li, Zhubei, TW;
Chi-On Chui, Hsinchu, TW;
Min-Hsiu Hung, Tainan, TW;
Hung-Yi Huang, Hsinchu, TW;
Chun-Cheng Chou, Taichung, TW;
Ying-Liang Chuang, Zhubei, TW;
Yen-Chun Huang, New Taipei, TW;
Chih-Tang Peng, Zhubei, TW;
Cheng-Po Chau, Tainan, TW;
Yen-Ming Chen, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a substrate. The method also includes forming a gate structure over the fin structure. The method further includes forming fin spacers over sidewalls of the fin structure and gate spacers over sidewalls of the gate structure. In addition, the method includes forming a source/drain structure over the fin structure and depositing a dummy material layer to cover the source/drain structure. The dummy material layer is removed faster than the gate spacers during the removal of the dummy material layer. The method further includes forming a salicide layer over the source/drain structure and the fin spacers, and forming a contact over the salicide layer. The dummy material layer includes Ge, amorphous silicon or spin-on carbon.