The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Jul. 01, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ta-Chun Ma, New Taipei, TW;
Yi-Cheng Li, Yunlin County, TW;
Pin-Ju Liang, Changhua County, TW;
Cheng-Po Chau, Tainan, TW;
Jung-Jen Chen, Hsinchu, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Chii-Horng Li, Zhubei, TW;
Kei-Wei Chen, Tainan, TW;
Cheng-Hsiung Yen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.