The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Mar. 12, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Chii-Ming Wu, Taipei, TW;
Sen-Hong Syue, Hsinchu County, TW;
Cheng-Po Chau, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a first trench in a semiconductor substrate. A mask is filled in the first trench and over the semiconductor substrate. After filling the mask in the first trench, the mask is patterned to form an opening in the mask. A second trench is formed in the semiconductor substrate. A depth of the second trench is different from a depth of the first trench. After forming the second trench in the semiconductor substrate, the mask is removed. A dielectric material is filled in both the first and second trenches.