Company Filing History:
Years Active: 2016-2018
Title: Chao Jiang: Innovator in Memory Device Technology
Introduction
Chao Jiang is a prominent inventor based in Singapore, known for his contributions to the field of memory device technology. With a total of 9 patents to his name, he has made significant advancements in the fabrication of floating gates and light-erasable embedded memory devices.
Latest Patents
One of Chao Jiang's latest patents is a method of fabricating floating gates. This method involves providing a substrate divided into a cell region and a logic region, where a silicon oxide layer and a silicon nitride layer cover both regions. Numerous shallow trench isolations (STIs) are formed in these layers and the substrate. The silicon nitride layer within the cell region is then removed to create a recess between adjacent STIs, while the layer in the logic region remains intact. A conductive layer is subsequently formed to fill this recess, which is then thinned to create the floating gate.
Another notable patent is for a light-erasable embedded memory device and the method of manufacturing it. This invention includes a substrate with a memory region and a core circuit region, featuring a floating gate on the memory region. The device incorporates at least two light-absorbing films above the floating gate, each with dummy via holes overlapping the floating gate, and a dielectric layer that fills these holes.
Career Highlights
Chao Jiang is currently employed at United Microelectronics Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and versatile.
Collaborations
Chao has collaborated with notable coworkers such as Hong Liao and Lanxiang Wang, contributing to various projects that enhance the functionality of memory devices.
Conclusion
Chao Jiang's innovative work in memory device technology has established him as a key figure in the industry. His patents reflect a commitment to advancing technology and improving the efficiency of memory devices.
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