The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jan. 06, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Lanxiang Wang, Singapore, SG;
Hong Liao, Singapore, SG;
Chao Jiang, Singapore, SG;
Duan Quan Liao, Singapore, SG;
Ye Chao Li, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/161 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/161 (2013.01); H01L 29/41783 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/66568 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; and forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure. Preferably, the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn.
Published as:
US9331200B1; CN105762068A;