logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9331200 B1

PDFFull Text
Date of Patent:
May. 03, 2016

Filed:

Jan. 06, 2015

Semiconductor device and method for fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Lanxiang Wang, Singapore, SG;

Hong Liao, Singapore, SG;

Chao Jiang, Singapore, SG;

Duan Quan Liao, Singapore, SG;

Ye Chao Li, Singapore, SG;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Kyoung Lee

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/161 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/161 (2013.01); H01L 29/41783 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/66568 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; and forming a first epitaxial layer, a second epitaxial layer, and a silicide layer in the substrate adjacent to the gate structure. Preferably, the first epitaxial layer, the second epitaxial layer, and the silicide layer comprise SiGeSn.

Published as:
US9331200B1; CN105762068A;

Find Patent Forward Citations

Wang, Lanxiang. (2016). Semiconductor device and method for fabricating the same (U.S. Patent No. 9331200). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9331200

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…