The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Jun. 21, 2017
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Xiao-Fei Han, Singapore, SG;

Ju-Bao Zhang, Singapore, SG;

Chao Jiang, Singapore, SG;

Hong Liao, Singapore, SG;

Wen-Wen Gong, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 29/66825 (2013.01);
Abstract

A manufacturing method of a semiconductor structure is provided. The manufacturing method of the semiconductor structure includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate has a first region and a second region surrounding the first region; forming a gate stack and a dummy gate stack in the first region, wherein the dummy gate stack surrounds the gate stack; forming an oxide layer on an exterior wall and a top surface of the dummy gate stack; forming a dummy conductive layer on the gate stack, the dummy gate stack and the oxide layer, wherein the dummy conductive layer has a concave bowl-shaped top surface in the first region; and performing a chemical mechanical polishing (CMP) process on the dummy conductive layer.


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