The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jul. 12, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Hock Chun Chin, Singapore, SG;
Lanxiang Wang, Singapore, SG;
Hong Liao, Singapore, SG;
Chao Jiang, Singapore, SG;
Chow Yee Lim, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A non-volatile memory device includes a substrate, a gate stack structure, an erase gate structure, and a ferroelectric layer. The gate stack structure is disposed on the substrate. The erase gate structure is disposed on the substrate and disposed at a first side of the gate stack structure. The ferroelectric layer is disposed on a sidewall of the gate stack structure, and the ferroelectric layer is disposed between the gate stack structure and the erase gate structure. The ferroelectric layer disposed between the gate stack structure and the erase gate structure may be used to forma negative capacitance effect for amplifying the voltage applied to the erase gate structure. The purpose of reducing power consumption may be achieved accordingly.