Binghua Hu

This inventor holds 87 USPTO granted patents and 6 published patent applications and 4 EPO patents, primarily in Deep Trench Technology (CPC class H01L21-26513). Top assignee: Texas Instruments Corporation. Active years: 2004-2025.

USPTO Granted Patents = 87 (Patent Applications = 6)

% Patents Active = 100.0

EPO Patents = 4 (Patent Applications = 6)

Average Co-Inventor Count = 3.3

ph-index = 8

Forward Citations = 262(Granted Patents)

Forward Citations (Not Self Cited) = 160(Dec 10, 2025)

Inventors with similar research interests:

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Company Filing History:

87 out of 29,854

Texas Instruments Corporation

patents

Years Active: 2004-2025

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Areas of Expertise:

Deep Trench Isolation

LDMOS Devices

Integrated Trench Capacitors

High Voltage CMOS

Drain Extended Transistor

ESD Protection

Capacitance Density

N-Type Well Diodes

Isolation Structures

Low Substrate Leakage

Trench Capacitor Fabrication

High Dose Antimony Implant

87 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12363926 - Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device (2025-07-15),

2. 12218188 - Deep trench intersections (2025-02-04),

3. 12205944 - Isolation structure for IC with epi regions sharing the same tank (2025-01-21),

4. 11869986 - Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device (2024-01-09),

5. 11742436 - Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistance (2023-08-29),

6. 11658176 - ESD protection device with deep trench isolation islands (2023-05-23),

7. 11626317 - Deep trench isolation with segmented deep trench (2023-04-11),

8. 11444075 - Isolation structure for IC with epi regions sharing the same tank (2022-09-13),

9. 11374124 - Protection of drain extended transistor field oxide (2022-06-28),

10. 11222986 - Semiconductor device with an integrated deep trench capacitor having high capacitance density and low equivalent series resistance (2022-01-11),

11. 11195958 - Semiconductor device with deep trench isolation and trench capacitor (2021-12-07),

12. 11152505 - Drain extended transistor (2021-10-19),

13. 11121207 - Integrated trench capacitor with top plate having reduced voids (2021-09-14),

14. 11101342 - Deep trench intersections (2021-08-24),

15. 10903356 - LDMOS device with body diffusion self-aligned to gate (2021-01-26),

Title: Binghua Hu - Pioneering Inventor from Plano

Introduction: Binghua Hu is a trailblazing inventor based in Plano, Texas, known for her innovative contributions to various fields.

Latest Patents: Binghua Hu holds several patents in the areas of technology and healthcare, showcasing her versatility and creativity in inventing novel solutions.

Career Highlights: With a background in engineering and a passion for problem-solving, Binghua Hu has had a successful career marked by groundbreaking inventions that have made a significant impact on industries.

Collaborations: Throughout her career, Binghua Hu has collaborated with leading researchers, engineers, and professionals to bring her inventions to life, fostering a culture of innovation and teamwork.

Conclusion: Binghua Hu's dedication to innovation and her remarkable inventions have solidified her reputation as a pioneering inventor, inspiring others to push the boundaries of what is possible in the world of technology and beyond.