The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Jun. 28, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Alexei Sadovnikov, Sunnyvale, CA (US);

Andrew Derek Strachan, Santa Clara, CA (US);

Henry Litzmann Edwards, Garland, TX (US);

Dhanoop Varghese, Plano, TX (US);

Xiaoju Wu, Dallas, TX (US);

Binghua Hu, Plano, TX (US);

James Robert Todd, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01); H01L 29/08 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/1045 (2013.01); H01L 29/66681 (2013.01);
Abstract

Described examples include integrated circuits, drain extended transistors and fabrication methods in which an oxide structure is formed over a drift region of a semiconductor substrate, and a shallow implantation process is performed using a first mask that exposes the oxide structure and a first portion of the semiconductor substrate to form a first drift region portion for connection to a body implant region. A second drift region portion is implanted in the semiconductor substrate under the oxide structure by a second implantation process using the first mask at a higher implant energy.


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