The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Oct. 29, 2019
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Henry Litzmann Edwards, Garland, TX (US);
Akram A. Salman, Plano, TX (US);
Binghua Hu, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/763 (2006.01); H01L 21/762 (2006.01); H01L 21/8222 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 21/265 (2013.01); H01L 21/26513 (2013.01); H01L 21/762 (2013.01); H01L 21/763 (2013.01); H01L 21/76237 (2013.01); H01L 21/8222 (2013.01); H01L 29/06 (2013.01); H01L 29/0692 (2013.01); H01L 29/10 (2013.01); H01L 29/1095 (2013.01); H01L 27/0623 (2013.01);
Abstract
An integrated circuit (IC) includes a semiconductor substrate in which a plurality of spaced-apart deep trench (DT) structures are formed. The IC further includes a plurality of DEEPN diffusion regions, each DEEPN diffusion region surrounding a corresponding one of the DT structures. Each of the DEEPN diffusion regions merges with at least one neighboring DEEPN diffusion region that surrounds at least one neighboring DT structure. The merged DEEPN diffusion regions may partially isolate two electronic devices, e.g. ESD devices.