The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Jul. 20, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Binghua Hu, Plano, TX (US);

Ye Shao, Plano, TX (US);

John K Arch, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/762 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0603 (2013.01); H01L 21/308 (2013.01); H01L 21/31053 (2013.01); H01L 21/32055 (2013.01); H01L 21/3212 (2013.01); H01L 21/76232 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01);
Abstract

A semiconductor device has a deep trench in a semiconductor substrate of the semiconductor device, with linear trench segments extending to a trench intersection. Adjacent linear trench segments are connected by connector trench segments that surround a substrate pillar in the trench intersection. Each connector trench segment has a width at least as great as widths of the linear trench segments connected by the connector trench segment. The deep trench includes a trench filler material. The deep trench may have three linear trench segments extending to the trench intersection, connected by three connector trench segments, or may have four linear trench segments extending to the trench intersection, connected by four connector trench segments.


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