The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Oct. 24, 2020
Texas Instruments Incorporated, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor device has a first trench and a second trench of a trench structure located in a substrate. The second trench is separated from the first trench by a trench space that is less than a first trench width of the first trench and less than a second trench width of the second trench. The trench structure includes a doped sheath having a first conductivity type, contacting and laterally surrounding the first trench and the second trench. The doped sheath extends from the top surface to an isolation layer and from the first trench to the second trench across the trench space. The semiconductor device includes a first region and a second region, both located in the semiconductor layer, having a second, opposite, conductivity type. The first region and the second region are separated by the first trench, the second trench, and the doped sheath.