The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Aug. 27, 2021
Texas Instruments Incorporated, Dallas, TX (US);
Umamaheswari Aghoram, Richardson, TX (US);
Akram Ali Salman, Plano, TX (US);
Binghua Hu, Plano, TX (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor device which includes two or more integrated deep trench features configured as a Zener diode. The Zener diode includes a plurality of deep trenches extending into semiconductor material of the substrate and a dielectric deep trench liner that includes a dielectric material. The deep trench further includes a doped sheath contacting the deep trench liner and an electrically conductive deep trench filler material within the deep trench. The doped sheath of adjacent deep trenches overlap and form a region of higher doping concentration which sets the breakdown voltage of the Zener diode. The Zener diode can be used as a triggering diode to limit the voltage on other components in a semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile