Goshen, NY, United States of America

Bartlet H Deprospo

Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 64(Granted Patents)

Forward Citations (Not Self Cited) = 32(Sep 21, 2024)


Years Active: 2016-2024

where 'Filed Patents' based on already Granted Patents

32 patents (USPTO):

Title: Unveiling the Innovative Journey of Bartlet H. Deprospo

Introduction: Bartlet H. Deprospo, a prolific inventor based in Goshen, NY, has made waves in the field of semiconductor technology. With an impressive portfolio of 50 patents to his name, Deprospo is a trailblazer in revolutionizing the industry with his groundbreaking innovations.

Latest Patents: Among his latest patents is the "Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device." This cutting-edge semiconductor device features a porous dielectric layer with a recessed portion, a conductive layer, and a cap layer. The exposed upper surface of the porous dielectric layer adds a unique dimension to the device's functionality.

Career Highlights: Deprospo's extensive career includes notable tenures at renowned companies such as IBM (International Business Machines Corporation) and Tessera, Inc. His contributions at these esteemed organizations have played a pivotal role in shaping the landscape of semiconductor technology.

Collaborations: Throughout his career, Deprospo has collaborated with esteemed professionals in the field, including Benjamin David Briggs and Michael Rizzolo. These collaborations have resulted in synergistic efforts that have pushed the boundaries of innovation and paved the way for novel technological advancements.

Conclusion: Bartlet H. Deprospo's unwavering commitment to innovation and his relentless pursuit of excellence have solidified his position as a leading figure in the world of semiconductor technology. His remarkable journey stands as a testament to the power of ingenuity and serves as an inspiration for aspiring inventors and innovators worldwide.

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