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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11056429 B1

PDFFull Text
Date of Patent:
Jul. 06, 2021

Filed:

Mar. 12, 2020

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

Applicant:

Tessera, Inc., San Jose, CA (US);

Inventors:

Benjamin David Briggs, Waterford, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Bartlet H. Deprospo, Goshen, NY (US);

Huai Huang, Saratoga, NY (US);

Christopher J. Penny, Saratoga Springs, NY (US);

Michael Rizzolo, Delmar, NY (US);

Assignee:

Tessera, Inc., San Jose, CA (US);

Attorney:

Lee & Hayes, P.C.

Primary Examiner:

Alexander G Ghyka

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/7682 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76819 (2013.01); H01L 21/76829 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5329 (2013.01); H01L 23/53219 (2013.01); H01L 23/53223 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 21/76825 (2013.01); H01L 21/76828 (2013.01); H01L 21/76832 (2013.01); H01L 21/76883 (2013.01); H01L 23/53252 (2013.01); H01L 2221/1047 (2013.01);
Abstract

A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.

Find Patent Forward Citations

Briggs, Benjamin. (2021). Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device (U.S. Patent No. 11056429). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11056429

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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