The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

May. 13, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Benjamin David Briggs, Waterford, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Bartlet H. Deprospo, Goshen, NY (US);

Michael Rizzolo, Delmar, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); B23K 26/082 (2014.01); B23K 26/00 (2014.01); B23K 26/03 (2006.01); B23K 26/70 (2014.01); B23K 26/062 (2014.01); B23K 26/352 (2014.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76894 (2013.01); B23K 26/0006 (2013.01); B23K 26/03 (2013.01); B23K 26/062 (2015.10); B23K 26/082 (2015.10); B23K 26/352 (2015.10); B23K 26/702 (2015.10); H01L 21/67115 (2013.01); H01L 21/76883 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01); H01L 23/53228 (2013.01);
Abstract

A method (and structure) includes performing an initial partial anneal of a metal interconnect overburden layer for semiconductor devices being fabricated on a chip on a semiconductor wafer. Orientation of an early recrystallizing grain at a specific location on a top surface of the metal overburden layer is determined, as implemented and controlled by a processor on a computer. A determination is made whether the orientation of the early recrystallizing grain is desirable or undesirable.


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