The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Jul. 30, 2018
International Business Machines Corporation, Armonk, NY (US);
Benjamin David Briggs, Waterford, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Bartlet H. Deprospo, Goshen, NY (US);
Huai Huang, Saratoga, NY (US);
Christopher J. Penny, Saratoga Springs, NY (US);
Michael Rizzolo, Albany, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a semiconductor device includes forming a porous dielectric layer including a recessed portion, forming a conductive layer in the recessed portion of the porous dielectric layer, and forming a conformal cap layer on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the conformal cap layer.