The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Apr. 30, 2018
International Business Machines Corporation, Armonk, NY (US);
Benjamin D. Briggs, Waterford, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
Bartlet H. DeProspo, Goshen, NY (US);
Michael Rizzolo, Albany, NY (US);
Nicole A. Saulnier, Albany, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a self-aligned pattern of vias in a semiconductor device comprises etching a pattern of lines that contain notches that are narrower than other parts of the line. Thereafter, vias are created where the notches are located. The locations of the vias are such that the effect of blown-out areas is minimized. Thereafter, the lines are etched and the vias and line areas are filled. The layers are planarized such that the metal fill is level with a surrounding ultra-low-k dielectric. Additional metal layers, lines, and vias can be created. Other embodiments are also described herein.