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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

Arup Bhattacharyya

This inventor holds 213 USPTO granted patents and 5 published patent applications and 2 EPO patents, primarily in Memory Technology (CPC class H01L27-11568). Top assignees: Micron Technology Incorporated, International Business Machines Corporation, Other. Active years: 1976-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Arup Bhattacharyya. Retrieved from https://idiyas.com/inventor/arup-bhattacharyya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 213 

% Patents Active = 82.2

 

Average Co-Inventor Count = 1.2

ph-index = 40

Forward Citations = 5,988(Granted Patents)

Forward Citations (Not Self Cited) = 3,665(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Essex Center, VT (US) (1980)
  • Chittenden County, VT (US) (2005)
  • Essex Juction, VT (US) (2009)
  • Essex Jct., VT (US) (2012 - 2015)
  • Essex Junction, VT (US) (1976 - 2022)

Company Filing History:

goldMedal201 out of 39,383 
 
Micron Technology Incorporated
 patents
silverMedal11 out of 166,524 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 834,708 
Other
 patents

Years Active: 1976-2022

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Areas of Expertise:
Memory Configurations
Multifunctional Memory Cells
Memory Arrays
Trench Isolation Interfaces
Gated Diode Memory Cells
Tunneling Materials
Integrated Computing Structures
Non-Volatile Memory
Dielectrics
Strained Transistor Channels
Nano-Crystal Memory Devices
Praseodymium Oxide Insulators
213 patents (USPTO):Explore Patents
1. 11264472 - Memory configurations (2022-03-01),
2. 11211503 - Memory arrays (2021-12-28),
3. 11211124 - Multifunctional memory cells (2021-12-28),
4. 11087842 - Multifunctional memory cells (2021-08-10),
5. 11031283 - Trench isolation interfaces (2021-06-08),
6. 10998042 - Memory cells with tunneling materials including lanthanum oxide (2021-05-04),
7. 10957389 - Multifunctional memory cells (2021-03-23),
8. 10892340 - Memory cell structures (2021-01-12),
9. 10811424 - Integrated computing structures formed on silicon (2020-10-20),
10. 10797053 - Gated diode memory cells (2020-10-06),
11. 10741658 - Memory configurations (2020-08-11),
12. 10566053 - Memory cells programmed via multi-mechanism charge transports (2020-02-18),
13. 10546639 - Multifunctional memory cells (2020-01-28),
14. 10541027 - Multifunctional memory cells (2020-01-21),
15. 10483155 - Trench isolation interfaces (2019-11-19),

Title: Arup Bhattacharyya: A Genius Innovator Shaping the Future of Memory Technologies

Introduction:

Arup Bhattacharyya, an exceptional inventor and innovator hailing from Essex Junction, VT, has made significant contributions to the field of memory technologies. With an impressive portfolio of 213 patents, Arup’s groundbreaking work in memory configurations and multifunctional memory cells has propelled the industry forward. In this article, we delve into his latest patents, career highlights, collaborations, and his overall impact on the world of innovations.

Latest Patents:

Arup Bhattacharyya's recent patents demonstrate his expertise in memory technologies, particularly in memory configurations and multifunctional memory cells. In one patent titled "Memory Configurations," Arup describes a memory design that utilizes series-coupled memory cells with dielectric stacks to store charge efficiently. This innovation promises enhanced memory performance and reliability.

Another patent, "Multifunctional Memory Cells," showcases Arup's pioneering work in developing memory cells with versatile capabilities. These memory cells feature gate elements, charge transport elements, and distinct charge storage elements utilizing nitride and gallium nitride materials. This invention opens doors to more efficient data storage solutions with improved memory density and performance.

Career Highlights:

Arup Bhattacharyya's remarkable career has revolved around renowned companies like Micron Technology Incorporated and IBM. At Micron, a global leader in memory and storage solutions, Arup has played a pivotal role in developing cutting-edge memory technologies. His contributions have helped propel Micron's position as an industry leader in memory innovations.

During his tenure at IBM, Arup further honed his expertise and made significant headway in advancing memory technologies. IBM, an iconic technology company known for its contributions across various sectors, has greatly benefited from Arup's inventive spirit and strong technical acumen.

Collaborations:

Arup Bhattacharyya has had the opportunity to collaborate with esteemed individuals in his field, supporting the exchange of knowledge and fostering innovation. Working alongside fellow innovators such as Leonard Forbes and Kie Y Ahn, Arup has been part of a dynamic team that has shared insights and pushed the boundaries of memory technologies. These collaborations have undoubtedly enriched his career and contributed to the groundbreaking inventions he has achieved.

Conclusion:

Arup Bhattacharyya's contributions to the field of memory technologies are undeniably impressive. With his vast portfolio of 213 patents, including his latest innovations in memory configurations and multifunctional memory cells, Arup has undoubtedly left an indelible mark on the industry. Through his work at renowned companies like Micron and IBM, along with his collaborations with exceptional colleagues, Arup continues to shape the future of memory technologies. We eagerly anticipate his future breakthroughs as he continues to push boundaries and revolutionize the world of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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