The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Apr. 18, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Arup Bhattacharyya, Essex Junction, VT (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/102 (2006.01); G11C 16/10 (2006.01); H01L 29/51 (2006.01); H01L 29/739 (2006.01); H01L 23/538 (2006.01); H01L 27/11568 (2017.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 27/07 (2006.01); G11C 11/36 (2006.01); G11C 11/39 (2006.01); H01L 27/11521 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1026 (2013.01); G11C 11/36 (2013.01); G11C 11/39 (2013.01); G11C 16/10 (2013.01); H01L 21/02112 (2013.01); H01L 21/02192 (2013.01); H01L 23/538 (2013.01); H01L 27/0711 (2013.01); H01L 27/102 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/40117 (2019.08); H01L 29/42312 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66356 (2013.01); H01L 29/7391 (2013.01);
Abstract
Examples relate generally to the field of semiconductor memory devices. In an example, a memory cell may include an access device coupled to an access line and a gated diode coupled to the access device. The gated diode may include a gate stack structure that includes a direct tunneling material, a trapping material, and a blocking material.