The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Sep. 17, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Arup Bhattacharyya, Essex Junction, VT (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/11521 (2017.01); H01L 27/11568 (2017.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/792 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H01L 27/11582 (2013.01);
Abstract
In an example, a memory may have a group of series-coupled memory cells, where a memory cell of the series-coupled memory cells has an access gate, a control gate coupled to the access gate, and a dielectric stack between the control gate and a semiconductor. The dielectric stack is to store a charge.