The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Sep. 18, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Arup Bhattacharyya, Essex Junction, VT (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 14/00 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0018 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); G11C 16/0466 (2013.01); G11C 16/10 (2013.01);
Abstract
The present disclosure includes multifunctional memory cells. A number of embodiments include a gate element, a charge transport element, a first charge storage element configured to store a first charge transported from the gate element and through the charge transport element, wherein the first charge storage element includes a nitride material, and a second charge storage element configured to store a second charge transported from the gate element and through the charge transport element, wherein the second charge storage element includes a gallium nitride material.