Anthony Mowry

This inventor holds 23 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2010-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anthony Mowry. Retrieved from https://idiyas.com/inventor/anthony-mowry

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 23

% Patents Active = 43.5

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 131(Granted Patents)

Location History:

Dresden, DE (2010 - 2011)
Buda, TX (US) (2010 - 2014)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2010-2014

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Areas of Expertise:

Temperature Monitoring

Heat Management

Dopant Profile Tuning

Strained Semiconductor

Thermocouples

MOS Devices

Heat Dissipation

Stress Memorization

Embedded Alloys

Transistor Device

Interlayer Dielectric

Spacer Width

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8796807 - Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials (2014-08-05),

2. 8665592 - Heat management using power management information (2014-03-04),

3. 8564120 - Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside (2013-10-22),

4. 8530894 - Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions (2013-09-10),

5. 8507351 - Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation (2013-08-13),

6. 8373244 - Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure (2013-02-12),

7. 8227266 - Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions (2012-07-24),

8. 8212184 - Cold temperature control in a semiconductor device (2012-07-03),

9. 8129236 - Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrode (2012-03-06),

10. 8093634 - In situ formed drain and source regions in a silicon/germanium containing transistor device (2012-01-10),

11. 8064197 - Heat management using power management information (2011-11-22),

12. 8048330 - Method of forming an interlayer dielectric material having different removal rates during CMP (2011-11-01),

13. 7977179 - Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation (2011-07-12),

14. 7939399 - Semiconductor device having a strained semiconductor alloy concentration profile (2011-05-10),

15. 7923338 - Increasing stress transfer efficiency in a transistor by reducing spacer width during the drain/source implantation sequence (2011-04-12),

Title: The Inventor Profile of Anthony Mowry

Introduction: Anthony Mowry is a prolific inventor based in Buda, Texas, known for his innovative contributions in various fields.

Latest Patents: Anthony Mowry holds several patents in the areas of renewable energy technologies, sustainable agriculture, and consumer electronics.

Career Highlights: With a background in engineering, Anthony Mowry has successfully developed and patented cutting-edge solutions that have garnered attention in the industry.

Collaborations: Throughout his career, Anthony Mowry has collaborated with leading research institutions and universities to further advance his inventions and bring them to market.

Conclusion: Anthony Mowry's dedication to innovation and problem-solving continues to make a significant impact in the world of technology and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]