The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
May. 28, 2008
Applicants:
Ralf Richter, Dresden, DE;
Thomas Foltyn, Zwickau, DE;
Anthony Mowry, Buda, TX (US);
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
Abstract
By providing an interlayer dielectric material with different removal rates, a desired minimum material height above gate electrode structures of sophisticated transistor devices of the 65 nm technology or 45 nm technology may be obtained. The reduced removal rate above the gate electrode may thus provide enhanced process robustness during the planarization of the interlayer dielectric layer stack prior to the formation of contact elements.