The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Feb. 27, 2009
Applicants:
Anthony Mowry, Buda, TX (US);
Andy Wei, Dresden, DE;
Andreas Gehring, Dresden, DE;
Casey Scott, Dresden, DE;
Inventors:
Anthony Mowry, Buda, TX (US);
Andy Wei, Dresden, DE;
Andreas Gehring, Dresden, DE;
Casey Scott, Dresden, DE;
Assignee:
Globalfoundries Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 21/363 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
By repeatedly applying a process sequence comprising an etch process and a selective epitaxial growth process during the formation of drain and source areas in a transistor device, highly complex dopant profiles may be generated on the basis of in situ doping. Further-more, a strain material may be provided while stress relaxation mechanisms may be reduced due to the absence of any implantation processes.