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Elmsford, NY, United States of America

Anirban Basu

USPTO Granted Patents = 61 (Patent Applications = 6)

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 204(Granted Patents)

Forward Citations (Not Self Cited) = 191(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Port Ewen, NY (US) (2015 - 2016)
Langrangeville, NY (US) (2016)
Ewen, NY (US) (2016)
Elmsford, NY (US) (2014 - 2019)
Legrangeville, NY (US) (2016 - 2020)
Lagrangeville, NY (US) (2016 - 2020)
Yorktown Heights, NY (US) (2018 - 2021)

Company Filing History:

56 out of 164,135

International Business Machines Corporation

Globalfoundries Inc.

Years Active: 2014-2021

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Areas of Expertise:

Device Isolation

Multi-Junction Solar Cell

Charge Carrier Transport

III-V MOSFET

Tunneling Field-Effect Transistor

Nanowire Field Effect Transistor

High Electron Mobility Transistor

Semiconductor Fabrication

Vertical Field Effect Transistors

Strained Channel Technology

Electricity-Less Water Disinfection

Remote Object Sensing

61 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10978562 - Device isolation using preferential oxidation of the bulk substrate (2021-04-13),

2. 10580926 - Multi-junction solar cell (2020-03-03),

3. 10559666 - Device isolation using preferential oxidation of the bulk substrate (2020-02-11),

4. 10529855 - Charge carrier transport facilitated by strain (2020-01-07),

5. 10367065 - Device isolation for III-V substrates (2019-07-30),

6. 10312400 - Multi-junction solar cell (2019-06-04),

7. 10249719 - Device isolation using preferential oxidation of the bulk substrate (2019-04-02),

8. 10243050 - Device isolation using preferential oxidation of the bulk substrate (2019-03-26),

9. 10096711 - Silicon-containing, tunneling field-effect transistor including III-N source (2018-10-09),

10. 10050110 - Device isolation for III-V substrates (2018-08-14),

11. 9997630 - Charge carrier transport facilitated by strain (2018-06-12),

12. 9985113 - Fabrication process for mitigating external resistance of a multigate device (2018-05-29),

13. 9865688 - Device isolation using preferential oxidation of the bulk substrate (2018-01-09),

14. 9785862 - System and method for feeling surface roughness through microscopic data (2017-10-10),

15. 9773909 - Silicon-containing, tunneling field-effect transistor including III-N source (2017-09-26),

Title: The Innovative Journey of Anirban Basu

Introduction: Anirban Basu, a talented inventor based in Elmsford, NY, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Anirban Basu holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing new solutions to complex problems.

Career Highlights: Throughout his career, Anirban Basu has demonstrated a keen ability to innovate and create novel inventions that have had a positive impact on society. His dedication to pushing the boundaries of technology has earned him recognition as a leading inventor in his field.

Collaborations: Anirban Basu has collaborated with top research institutions and leading companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Anirban Basu's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

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