The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Oct. 18, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anirban Basu, Lagrangeville, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Davood Shahrjerdi, White Plains, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0376 (2006.01); H01L 31/078 (2012.01); H01L 31/028 (2006.01); H01L 31/0368 (2006.01); H01L 27/142 (2014.01); H01L 31/0687 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 27/142 (2013.01); H01L 31/028 (2013.01); H01L 31/03682 (2013.01); H01L 31/03762 (2013.01); H01L 31/0687 (2013.01); H01L 31/078 (2013.01); Y02E 10/544 (2013.01);
Abstract

A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer. The multi-junction solar cell can also be comprised of a heavily doped silicon layer on a non-light receiving back surface of the high-crystalline germanium solar cell and a tunnel junction between the high-crystalline silicon solar cell and the high-crystalline germanium solar cell.


Find Patent Forward Citations

Loading…