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For the Inventor, By the Inventor

Woodstock, MD, United States of America

Andre E Berghmans

This inventor holds 16 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology. Top assignee: Northrop Grumman Systems Corporation. Active years: 2004-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andre E Berghmans. Retrieved from https://idiyas.com/inventor/andre-e-berghmans

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16

% Patents Active = 43.8

 

Average Co-Inventor Count = 6.3

ph-index = 3

Forward Citations = 40(Granted Patents)


Location History:

  • Bethpagen, NY (US) (2004)
  • Owings Mills, MD (US) (2008)
  • Woodstock, MD (US) (2012 - 2017)
  • Owing Mills, MD (US) (2008 - 2020)

Company Filing History:

goldMedal16 out of 3,456 
 
Northrop Grumman Systems Corporation
 patents

Years Active: 2004-2020

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Areas of Expertise:
Nano Avalanche Photodiode
Photon Detection
Carbon Nanotube Transistor
Silicon Carbide
Semiconductor Heterojunction
High Dielectric Capacitor
Germanium Nanofilm
Nuclear Radiation Detection
Sintered Glass Bead Filter
Spectral Imaging
Cobalt-Carbon Alloy
Carbon Mixture Ohmic Contact
16 patents (USPTO):Explore Patents
1. 10629767 - Nano avalanche photodiode architecture for photon detection (2020-04-21),
2. 10211359 - Nano avalanche photodiode architecture for photon detection (2019-02-19),
3. 9570695 - Carbon mixture ohmic contact for carbon nanotube transistor devices (2017-02-14),
4. 9570646 - Nano avalanche photodiode architecture for photon detection (2017-02-14),
5. 9559308 - Method for growing carbon nanotubes (2017-01-31),
6. 9401488 - Cobalt-carbon eutectic metal alloy ohmic contact for carbon nanotube field effect transistors (2016-07-26),
7. 8278666 - Method and apparatus for growing high purity 2H-silicon carbide (2012-10-02),
8. 7888248 - Method of producing large area SiC substrates (2011-02-15),
9. 7855108 - Semiconductor heterojunction devices based on SiC (2010-12-21),
10. 7830644 - High dielectric capacitor materials and method of their production (2010-11-09),
11. 7737534 - Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer (2010-06-15),
12. 7683400 - Semiconductor heterojunction devices based on SiC (2010-03-23),
13. 7525099 - Nuclear radiation detection system (2009-04-28),
14. 7371282 - Solid solution wide bandgap semiconductor materials (2008-05-13),
15. 7327896 - Testing apparatus and method for a spectral imaging system (2008-02-05),

Title: The Innovative Journey of Andre E Berghmans

Introduction: Andre E Berghmans is a pioneering inventor based in Woodstock, MD, known for her groundbreaking contributions to various fields.

Latest Patents: Andre E Berghmans holds several patents in the areas of sustainable energy solutions, medical devices, and advanced materials.

Career Highlights: With a career spanning over two decades, Andre E Berghmans has been at the forefront of innovation, leading research and development teams to create cutting-edge technologies.

Collaborations: Throughout her career, Andre E Berghmans has collaborated with leading universities, research institutions, and companies to bring her inventions to life and make a lasting impact on society.

Conclusion: Andre E Berghmans continues to inspire the next generation of inventors with her passion for innovation and her dedication to creating a better future through her groundbreaking inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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