The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jun. 23, 2010
Narsingh B. Singh, Ellicott City, MD (US);
Sean R. Mclaughlin, Severn, MD (US);
Thomas J. Knight, Silver Spring, MD (US);
Robert M. Young, Ellicott, MD (US);
Brian P. Wagner, Baltimore, MD (US);
David A. Kahler, Halethorpe, MD (US);
Andre E. Berghmans, Woodstock, MD (US);
David J. Knuteson, Ellicot City, MD (US);
Ty R. Mcnutt, Columbia, MD (US);
Jerry W. Hedrick, Jr., Arnold, MD (US);
George M. Bates, Burke, VA (US);
Kenneth Petrosky, Severna Park, MD (US);
Narsingh B. Singh, Ellicott City, MD (US);
Sean R. McLaughlin, Severn, MD (US);
Thomas J. Knight, Silver Spring, MD (US);
Robert M. Young, Ellicott, MD (US);
Brian P. Wagner, Baltimore, MD (US);
David A. Kahler, Halethorpe, MD (US);
Andre E. Berghmans, Woodstock, MD (US);
David J. Knuteson, Ellicot City, MD (US);
Ty R. McNutt, Columbia, MD (US);
Jerry W. Hedrick, Jr., Arnold, MD (US);
George M. Bates, Burke, VA (US);
Kenneth Petrosky, Severna Park, MD (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile