The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Jun. 26, 2006
Narsingh B. Singh, Ellicott City, MD (US);
Brian P. Wagner, Baltimore, MD (US);
David J. Knuteson, Linthicum, MD (US);
Michael E. Aumer, Laurel, MD (US);
Andre Berghmans, Owing Mills, MD (US);
Darren Thomson, Ellicott City, MD (US);
David Kahler, Arbutus, MD (US);
Narsingh B. Singh, Ellicott City, MD (US);
Brian P. Wagner, Baltimore, MD (US);
David J. Knuteson, Linthicum, MD (US);
Michael E. Aumer, Laurel, MD (US);
Andre Berghmans, Owing Mills, MD (US);
Darren Thomson, Ellicott City, MD (US);
David Kahler, Arbutus, MD (US);
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Abstract
A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).