The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Jul. 15, 2015
Applicants:

Melody E. Grubbs, Baltimore, MD (US);

Andre E. Berghmans, Woodstock, MD (US);

Matthew J. Walker, Glen Burnie, MD (US);

Monica P. Lilly, Frederick, MD (US);

Inventors:

Melody E. Grubbs, Baltimore, MD (US);

Andre E. Berghmans, Woodstock, MD (US);

Matthew J. Walker, Glen Burnie, MD (US);

Monica P. Lilly, Frederick, MD (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 21/02 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0048 (2013.01); H01L 21/02606 (2013.01); H01L 51/0003 (2013.01); H01L 51/0558 (2013.01); H01L 2924/13061 (2013.01);
Abstract

A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.


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