The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
Mar. 05, 2007
Narsingh B. Singh, Ellicott City, MD (US);
John J. Talvacchio, Ellicott City, MD (US);
Marc Sherwin, Catonsville, MD (US);
Andre Berghmans, Owing Mills, MD (US);
David J. Knuteson, Columbia, MD (US);
David Kahler, Arbutus, MD (US);
Brian Wagner, Baltimore, MD (US);
John D. Adam, Millersville, MD (US);
Narsingh B. Singh, Ellicott City, MD (US);
John J. Talvacchio, Ellicott City, MD (US);
Marc Sherwin, Catonsville, MD (US);
Andre Berghmans, Owing Mills, MD (US);
David J. Knuteson, Columbia, MD (US);
David Kahler, Arbutus, MD (US);
Brian Wagner, Baltimore, MD (US);
John D. Adam, Millersville, MD (US);
Northop Grumman Systems Corporation, Los Angeles, CA (US);
Abstract
Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCuTiOor LaGaSiO. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.