The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Jul. 13, 2007
Narsingh Bahadur Singh, Ellicott City, MD (US);
Brian P. Wagner, Baltimore, MD (US);
David J. Knuteson, Columbia, MD (US);
David Kahler, Arbutus, MD (US);
Andre E. Berghmans, Owing Mills, MD (US);
Michael Aumer, Raleigh, NC (US);
Jerry W. Hedrick, Arnold, MD (US);
Marc E. Sherwin, Catonsville, MD (US);
Michael M. Fitelson, Columbia, MD (US);
Mark S. Usefara, Baltimore, MD (US);
Sean Mclaughlin, Severn, MD (US);
Travis Randall, Baltimore, MD (US);
Thomas J. Knight, Silver Spring, MD (US);
Narsingh Bahadur Singh, Ellicott City, MD (US);
Brian P. Wagner, Baltimore, MD (US);
David J. Knuteson, Columbia, MD (US);
David Kahler, Arbutus, MD (US);
Andre E. Berghmans, Owing Mills, MD (US);
Michael Aumer, Raleigh, NC (US);
Jerry W. Hedrick, Arnold, MD (US);
Marc E. Sherwin, Catonsville, MD (US);
Michael M. Fitelson, Columbia, MD (US);
Mark S. Usefara, Baltimore, MD (US);
Sean McLaughlin, Severn, MD (US);
Travis Randall, Baltimore, MD (US);
Thomas J. Knight, Silver Spring, MD (US);
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Abstract
A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.