The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Feb. 20, 2014
Narsingh B. Singh, Ellicott City, MD (US);
John V. Veliadis, Hanover, MD (US);
Bettina Nechay, Laurel, MD (US);
Andre Berghmans, Owing Mills, MD (US);
David J. Knuteson, Ellicott City, MD (US);
David Kahler, Arbutus, MD (US);
Brian Wagner, Baltimore, MD (US);
Marc Sherwin, Catonsville, MD (US);
Narsingh B. Singh, Ellicott City, MD (US);
John V. Veliadis, Hanover, MD (US);
Bettina Nechay, Laurel, MD (US);
Andre Berghmans, Owing Mills, MD (US);
David J. Knuteson, Ellicott City, MD (US);
David Kahler, Arbutus, MD (US);
Brian Wagner, Baltimore, MD (US);
Marc Sherwin, Catonsville, MD (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.