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For the Inventor, By the Inventor

Lairei, MD, United States of America

Bettina A Nechay

USPTO Granted Patents = 13


Average Co-Inventor Count = 8.0

ph-index = 5

Forward Citations = 51(Granted Patents)


Location History:

  • Annapolis, MD (US) (2015 - 2017)
  • Laurei, MD (US) (2017)
  • Lairei, MD (US) (2016 - 2018)
  • Laurel, MD (US) (2016 - 2020)

Company Filing History:

goldMedal13 out of 3,387 
 
Northrop Grumman Systems Corporation
 patents

Years Active: 2015-2020

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13 patents (USPTO):Explore Patents
1. 10854600 - Integrated enhancement mode and depletion mode device structure and method of making the same (2020-12-01),
2. 10629767 - Nano avalanche photodiode architecture for photon detection (2020-04-21),
3. 10468406 - Integrated enhancement mode and depletion mode device structure and method of making the same (2019-11-05),
4. 10211359 - Nano avalanche photodiode architecture for photon detection (2019-02-19),
5. 10084075 - Methods of making multichannel devices with improved performance (2018-09-25),
6. 9773897 - Multichannel devices with gate structures to increase breakdown voltage (2017-09-26),
7. 9711616 - Dual-channel field effect transistor device having increased amplifier linearity (2017-07-18),
8. 9711615 - Multichannel devices with improved performance and methods of making the same (2017-07-18),
9. 9570646 - Nano avalanche photodiode architecture for photon detection (2017-02-14),
10. 9472634 - All around contact device and method of making the same (2016-10-18),
11. 9466679 - All around contact device and method of making the same (2016-10-11),
12. 9419120 - Multichannel devices with improved performance (2016-08-16),
13. 9202906 - Superlattice crenelated gate field effect transistor (2015-12-01),

Title: **Innovative Contributions of Bettina A. Nechay**

Introduction

Bettina A. Nechay is a prominent inventor based in Lairei, MD, USA, known for her significant contributions to the field of integrated circuits. With a remarkable portfolio of 13 patents, she has established herself as a leader in innovation, particularly in semiconductor technology.

Latest Patents

Among her recent patents is the "Integrated Enhancement Mode and Depletion Mode Device Structure and Method of Making the Same," which presents a novel method for forming an integrated circuit. This method involves creating a heterostructure over a substrate made from semiconductor materials. The innovative approach includes etching a castellated channel region, which enhances the functionality of electronic devices by defining ridge channels interlaced with trenches. Additionally, she has developed the "Nano Avalanche Photodiode Architecture for Photon Detection." This integrated circuit utilizes a substrate material with an epitaxial layer, allowing for single photon detection through an avalanche photodiode formed with nanowires, significantly advancing the field of photon detection.

Career Highlights

Bettina A. Nechay is currently affiliated with Northrop Grumman Systems Corporation, where she has been instrumental in advancing technology within the company. Her work focuses on innovative solutions that address challenges in integrated circuit design and semiconductor engineering.

Collaborations

Throughout her career, Bettina has collaborated with several professionals, including her coworkers Eric Jonathan Stewart and Robert Samuel Howell. These partnerships have been pivotal in fostering innovation and driving the development of new technologies.

Conclusion

Bettina A. Nechay's inventive spirit and dedication to her field have resulted in groundbreaking advancements in integrated circuit technology. Her 13 patents reflect her commitment to innovation and her significantly impact on the industry. As she continues her work at Northrop Grumman Systems Corporation, her contributions will undoubtedly inspire future developments in semiconductor technology.

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