The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Apr. 01, 2015
Bettina A. Nechay, Laurei, MD (US);
Robert S. Howell, Silver Spring, MD (US);
Eric J. Stewart, Silver Spring, MD (US);
Howell George Henry, Ellicott City, MD (US);
Justin Andrew Parke, Ellicott City, MD (US);
Ronald G. Freitag, Catonsville, MD (US);
Bettina A. Nechay, Laurei, MD (US);
Robert S. Howell, Silver Spring, MD (US);
Eric J. Stewart, Silver Spring, MD (US);
Howell George Henry, Ellicott City, MD (US);
Justin Andrew Parke, Ellicott City, MD (US);
Ronald G. Freitag, Catonsville, MD (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
A transistor device is provided that includes a base structure and a superlattice structure that overlies the base structure. The superlattice structure comprises a multichannel ridge having sides that extend to the base structure. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge. A three-sided gate configuration is provided that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth. The three-sided gate configuration is configured to re-distribute peak electric fields along the three-sided gate configuration to facilitate the increase in breakdown voltage of the transistor device.