The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Jun. 15, 2017
Bettina A. Nechay, Lairei, MD (US);
Shalini Gupta, Falls Church, VA (US);
Matthew Russell King, Linthicum, MD (US);
Eric J. Stewart, Silver Spring, MD (US);
Robert S. Howell, Silver Spring, MD (US);
Justin Andrew Parke, Ellicott City, MD (US);
Harlan Carl Cramer, Columbia, MD (US);
Howell George Henry, Ellicott City, MD (US);
Ronald G. Freitag, Catonsville, MD (US);
Karen Marie Renaldo, Pasadena, MD (US);
Bettina A. Nechay, Lairei, MD (US);
Shalini Gupta, Falls Church, VA (US);
Matthew Russell King, Linthicum, MD (US);
Eric J. Stewart, Silver Spring, MD (US);
Robert S. Howell, Silver Spring, MD (US);
Justin Andrew Parke, Ellicott City, MD (US);
Harlan Carl Cramer, Columbia, MD (US);
Howell George Henry, Ellicott City, MD (US);
Ronald G. Freitag, Catonsville, MD (US);
Karen Marie Renaldo, Pasadena, MD (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.