The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Jul. 12, 2006
Narsingh Bahadur Singh, Ellicott City, MD (US);
Brian Wagner, Baltimore, MD (US);
Mike Aumer, Laurel, MD (US);
Darren Thomson, Ellicott City, MD (US);
David Kahler, Arbutus, MD (US);
Andre Berghmans, Owing Mills, MD (US);
David J. Knuteson, Linthicum, MD (US);
Narsingh Bahadur Singh, Ellicott City, MD (US);
Brian Wagner, Baltimore, MD (US);
Mike Aumer, Laurel, MD (US);
Darren Thomson, Ellicott City, MD (US);
David Kahler, Arbutus, MD (US);
Andre Berghmans, Owing Mills, MD (US);
David J. Knuteson, Linthicum, MD (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)(SiC)without any buffer layer is disclosed. The (AIN)(SiC)alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)(SiC)alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.