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For the Inventor, By the Inventor

Heverlee, Belgium

Amey Mahadev Walke

USPTO Granted Patents = 13 

 

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Mumbai, IN (2016)
  • Hsinchu, TW (2017 - 2019)
  • Heverlee, BE (2018 - 2024)

Company Filing History:

goldMedal11 out of 960 
 
Imec Vzw
 patents
silverMedal3 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2016-2025

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13 patents (USPTO):
1. 12414302 - Ferroelectric device (2025-09-09),
2. 11968841 - Ferroelectric device based on hafnium zirconate and method of fabricating the same (2024-04-23),
3. 11646200 - Integration of a III-V construction on a group IV substrate (2023-05-09),
4. 11557503 - Method for co-integration of III-V devices with group IV devices (2023-01-17),
5. 11322390 - Cointegration of gallium nitride and silicon (2022-05-03),
6. 11195767 - Integration of a III-V device on a Si substrate (2021-12-07),
7. 10367031 - Sequential integration process (2019-07-30),
8. 10347536 - Semi-sequential 3D integration (2019-07-09),
9. 10276575 - Multi-threshold voltage field effect transistor and manufacturing method thereof (2019-04-30),
10. 10236183 - Monolithic integration of semiconductor materials (2019-03-19),
11. 10163714 - Semi-sequential 3D integration (2018-12-25),
12. 9837416 - Multi-threshold voltage field effect transistor and manufacturing method thereof (2017-12-05),
13. 9419114 - Tunnel field-effect transistor (2016-08-16),

Title: Amey Mahadev Walke: Innovator in Ferroelectric Devices

Introduction

Amey Mahadev Walke is a prominent inventor based in Heverlee, Belgium. He has made significant contributions to the field of ferroelectric devices, holding a total of 13 patents. His work focuses on innovative materials and structures that enhance the performance of electronic devices.

Latest Patents

Walke's latest patents include advancements in ferroelectric devices. One notable patent describes a ferroelectric device layer structure that incorporates a first electrode, a second electrode, and a ferroelectric layer made of hafnium zirconate (HZO). This structure also features an oxide layer of niobium oxide or tantalum oxide arranged on the ferroelectric layer. Another patent details a ferroelectric device, such as a metal-ferroelectric-metal (MFM) capacitor or a ferroelectric random access memory (Fe-RAM), which is also based on hafnium zirconate. This device includes a doped HZO layer positioned between the first and second electrodes, enhancing its functionality.

Career Highlights

Throughout his career, Amey Walke has worked with leading companies in the semiconductor industry. He has been associated with Imec Vzw and Taiwan Semiconductor Manufacturing Company Ltd., where he has contributed to cutting-edge research and development in ferroelectric technologies.

Collaborations

Walke has collaborated with notable colleagues, including Nadine Collaert and Liesbeth Witters. Their combined expertise has furthered advancements in the field of ferroelectric devices.

Conclusion

Amey Mahadev Walke's innovative work in ferroelectric devices has positioned him as a key figure in the electronics industry. His patents reflect a commitment to advancing technology and improving device performance.

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