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For the Inventor, By the Inventor

Redondo Beach, CA, United States of America

Alana Nakata

This inventor holds 22 USPTO granted patents and 1 published patent application, primarily in GaN Transistor Technology. Top assignees: Efficient Power Conversion Corporation, International Rectifier Corporation. Active years: 2012-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Alana Nakata. Retrieved from https://idiyas.com/inventor/alana-nakata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 95.5

Average Co-Inventor Count = 5.7

ph-index = 7

Forward Citations = 130(Granted Patents)


Company Filing History:

goldMedal21 out of 70 
 
Efficient Power Conversion Corporation
 patents
silverMedal1 out of 1,231 
 
International Rectifier Corporation
 patents

Years Active: 2012-2020

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Areas of Expertise:
GaN Transistors
Semiconductor Devices
Integrated Circuits
Back Surface Isolation
Polysilicon Layers
Enhancement Mode
HEMT Devices
Gate Structures
Isolation Structures
Current Density
Threshold Voltages
Device Packaging
22 patents (USPTO):Explore Patents
1. 10600674 - Semiconductor devices with back surface isolation (2020-03-24),
2. 10312335 - Gate with self-aligned ledge for enhancement mode GaN transistors (2019-06-04),
3. 10312260 - GaN transistors with polysilicon layers used for creating additional components (2019-06-04),
4. 10312131 - Semiconductor devices with back surface isolation (2019-06-04),
5. 10090274 - Flip chip interconnection with reduced current density (2018-10-02),
6. 9837438 - GaN transistors with polysilicon layers used for creating additional components (2017-12-05),
7. 9748347 - Gate with self-aligned ledged for enhancement mode GaN transistors (2017-08-29),
8. 9607876 - Semiconductor devices with back surface isolation (2017-03-28),
9. 9583480 - Integrated circuit with matching threshold voltages and method for making same (2017-02-28),
10. 9331191 - GaN device with reduced output capacitance and process for making same (2016-05-03),
11. 9214528 - Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits (2015-12-15),
12. 9214461 - GaN transistors with polysilicon layers for creating additional components (2015-12-15),
13. 9214399 - Integrated circuit with matching threshold voltages and method for making same (2015-12-15),
14. 9171911 - Isolation structure in gallium nitride devices and integrated circuits (2015-10-27),
15. 8969918 - Enhancement mode gallium nitride transistor with improved gate characteristics (2015-03-03),

Title: The Innovations of Alana Nakata: A Journey Through Semiconductor Patents

Introduction: Alana Nakata, based in Redondo Beach, California, is a prolific inventor known for her significant contributions to semiconductor technology. With a remarkable portfolio of 22 patents, her work continues to influence the field of electronics and materials science.

Latest Patents: Among her latest innovations are patents involving semiconductor devices with back surface isolation. These patents detail circuits, structures, and techniques for independently connecting a surrounding material in a part of a semiconductor device to its respective contact. To achieve these advancements, Alana employs a combination of one or more conductive wells that are electrically isolated in at least one bias polarity. This innovative approach facilitates improved device performance and reliability.

Career Highlights: Alana Nakata has made substantial contributions during her tenure at Efficient Power Conversion Corporation, which focuses on developing advanced semiconductor solutions. Her expertise in semiconductor technology has positioned her as a key figure in the industry, and her patents reflect the significant advancements made in this rapidly evolving field.

Collaborations: Throughout her career, Alana has collaborated with notable professionals in her field, including Jianjun Cao and Alexander Lidow. Together, they have worked on pioneering technologies that push the boundaries of semiconductor applications, contributing to improvements in efficiency and performance.

Conclusion: Alana Nakata's innovative spirit and commitment to advancing semiconductor technology are evident in her extensive patent portfolio. Her work continues to inspire future developments and showcases the importance of innovation within the electronics industry. Her contributions highlight the essential role inventors like her play in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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