The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Apr. 08, 2010
Applicants:
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Jianjun Cao, Torrance, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Inventors:
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Jianjun Cao, Torrance, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Assignee:
Efficient Power Conversion Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01);
Abstract
An enhancement mode GaN transistor having a gate pGaN structure having a thickness which avoids dielectric failure. In one embodiment, this thickness is in the range of 400 Å to 900 Å. In a preferred embodiment, the thickness is 600 Å.