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For the Inventor, By the Inventor

Torrance, CA, United States of America

Guang Yuan Zhao

This inventor holds 8 USPTO granted patents. Top assignee: Efficient Power Conversion Corporation. Active years: 2013-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guang Yuan Zhao. Retrieved from https://idiyas.com/inventor/guang-yuan-zhao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 7

Forward Citations = 117(Granted Patents)


Company Filing History:

goldMedal8 out of 70 
 
Efficient Power Conversion Corporation
 patents

Years Active: 2013-2017

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8 patents (USPTO):Explore Patents
1. 9607876 - Semiconductor devices with back surface isolation (2017-03-28),
2. 8969918 - Enhancement mode gallium nitride transistor with improved gate characteristics (2015-03-03),
3. 8853749 - Ion implanted and self aligned gate structure for GaN transistors (2014-10-07),
4. 8823012 - Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same (2014-09-02),
5. 8436398 - Back diffusion suppression structures (2013-05-07),
6. 8431960 - Dopant diffusion modulation in GaN buffer layers (2013-04-30),
7. 8404508 - Enhancement mode GaN HEMT device and method for fabricating the same (2013-03-26),
8. 8350294 - Compensated gate MISFET and method for fabricating the same (2013-01-08),

Title: The Innovations of Guang Yuan Zhao

Introduction

Guang Yuan Zhao is a prominent inventor based in Torrance, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of Zhao's latest patents is for semiconductor devices with back surface isolation. This innovation involves circuits, structures, and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided. Another notable patent is for an enhancement mode gallium nitride transistor with improved gate characteristics. This enhancement mode GaN transistor features a gate pGaN structure with a thickness that avoids dielectric failure. In one embodiment, this thickness is in the range of 400 μm to 900 μm, with a preferred embodiment of 600 μm.

Career Highlights

Guang Yuan Zhao is currently employed at Efficient Power Conversion Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Zhao has collaborated with notable colleagues, including Robert A Beach and Alexander Lidow. These partnerships have contributed to the development of cutting-edge technologies in the field.

Conclusion

Guang Yuan Zhao's contributions to semiconductor technology are noteworthy, with a focus on improving device performance and reliability. His innovative patents and collaborations highlight his significant impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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