The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Feb. 23, 2012
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Jianjun Cao, Torrance, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Robert Strittmatter, La Canada, CA (US);
Fang Chang Liu, Taiwan, TW;
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Jianjun Cao, Torrance, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Robert Strittmatter, La Canada, CA (US);
Fang Chang Liu, Taiwan, TW;
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability.