The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Apr. 08, 2010
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Jianjun Cao, Torrance, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Jianjun Cao, Torrance, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
An enhancement-mode GaN transistor and a method of forming it. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process.