The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Apr. 08, 2010
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Jianjun Cao, Torrance, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Alexander Lidow, Marina Del Ray, CA (US);
Robert Beach, La Crescenta, CA (US);
Jianjun Cao, Torrance, CA (US);
Alana Nakata, Redondo Beach, CA (US);
Guang Yuan Zhao, Torrance, CA (US);
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile